Doped lead telluride-based semiconductors: New possibilities for detection of teraherz radiation

International Journal of Modern Physics B

Volumn 18, Issue 16, 2004, Pages 2223-2245

  Khokhlov, Dmitriy ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Doping; Narrow gap semiconductor; Photoconductivity; Photodetector; Teraherz

Indexed keywords

ALLOY; GERMANIUM; LEAD; SILICON; TELLURIUM DERIVATIVE;

CONDUCTANCE; DOPING; PHOTOCHEMISTRY; PHYSICAL CHEMISTRY; QUANTUM CHEMISTRY; RADIATION; RADIOCHEMISTRY; REVIEW; SEMICONDUCTOR;

EID: 4944222706     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217979204026111     Document Type: Review

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