Impurity photovoltaic effect with defect relaxation: Implications for low band gap semiconductors such as silicon

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2603-2609

  Brown, Andrew S ^a   Green, Martin A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRONS; ENERGY GAP; IMPURITIES; PHOTONS; PHOTOVOLTAIC EFFECTS; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MANUFACTURE; SOLAR ENERGY;

CONDUCTION BAND; ELECTRON RELAXATION; IMPURITY PHOTOVOLTAIC (IPV) SOLAR CELL DEVICES; NONOPTICAL TRANSITION;

SEMICONDUCTING SILICON;

EID: 4944222293     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1777394     Document Type: Article

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