Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique

Progress In Crystal Growth And Characterization

Volumn 2, Issue C, 1979, Pages 309-375

  Olsen, G H ^a   Zamerowski, T J ^a  

^a SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS;

EID: 49149138440     PISSN: 01463535     EISSN: None     Source Type: Journal    
DOI: 10.1016/0146-3535(81)90039-3     Document Type: Article

References (124)

1. Invited: Preparation and Properties of GaAs Devices by Molecular Beam Epitaxy
2. The Use of Metal-Organics in the Preparation of Semiconductor Materials
3. Preparation and Properties of Epitaxial Gallium Arsenide
4. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
5. Vapor phase epitaxial materials for LED applications
6. Vapor Phase Growth and Properties of Aluminum Phosphide
7. Kinetic aspects in the vapour phase epitaxy of III–V compounds
8. The Transport of Gallium Arsenide in the Vapor Phase by Chemical Reaction
9. Mass Spectrometric Studies of Vapor Phase Crystal Growth
10. Vapor Pressure Dependence of the Relative Composition of III–V Mixed Crystals in Vapor Phase Epitaxy
11. Analysis of the Hydrogen Reduction of Silicon Tetrachloride Process on the Basis of a Quasi-Equilibrium Model
12. Coefficients of condensation, evaporation and thermal accomodation
13. A preliminary study of dislocations in indium and gallium phosphides
14. III–V Surface Studies
15. Microscopic Mechanisms of Growth of Dark Line Defects in Double Heterostructure Lasers
16. Degradation in injection lasers
17. VPE Growth of III/V Semiconductors
18. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence
19. Vapor Growth and Properties of AlAs
20. Vapor Growth of InAsxP1-x
21. On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal Substrates
22. Bandgap and lattice constant of GaInAsP as a function of alloy composition
23. The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and Phosphine
24. Multilayered structures of epitaxial indium phosphide
25. The preparation of high purity epitaxial InP
26. III–V Heterojunction Structures for Long-Wavelenght Injection Lasers
27. Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga1−xAlxAs lasers
28. Electron mobility in InP
29. Measurement of the Depth of Diffused Layers in Silicon by the Grooving Method