Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Kim, Dae Hyeong ^a   Choi, Won Mook ^b   Ahn, Jong Hyun ^c   Kim, Hoon Sik ^a   Song, Jizhou ^d   Huang, Yonggang ^e   Liu, Zhuangjian ^f   Lu, Chun ^f   Koh, Chan Ghee ^g   Rogers, John A ^a,d  

^a University of Illinois at Urbana Champaign   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Sungkyunkwan University   (South Korea)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^e NORTHWESTERN UNIVERSITY   (United States)

^f INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^g NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS INDUSTRY; INTEGRATED CIRCUITS; METALLIC COMPOUNDS; METALS; MONOLITHIC INTEGRATED CIRCUITS; NONMETALS; SILICON; STRAIN;

ACTIVE DEVICES; CIRCUIT INTEGRATION; ELECTRICAL MODELING; ELECTRICAL PERFORMANCES; EXPERIMENTAL CHARACTERIZATION; METAL LINES; METAL OXIDES; MONOLITHICALLY INTEGRATED; POLYMER BRIDGING; SILICON CIRCUITS; SILICON-INTEGRATED CIRCUITS;

NETWORKS (CIRCUITS);

EID: 49149102963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963364     Document Type: Article

References (7)

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