Epitaxially grown ferroelectric thin films for agile devices

Phase Transitions

Volumn 81, Issue 7-8, 2008, Pages 643-665

  Perrin, A ^a   Rousseau, A ^a,b   Fasquelle, D ^c   Laur, V ^d   Bouquet, V ^a   Deputier, S ^a   Laurent, P ^d   Tanne, G ^d   Huret, F ^d   Carru, J C ^c   Guilloux Viry, M ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

^b UNIV GRENOBLE ALPES   (France)

^c UNIVERSITÉ DU LITTORAL CÔTE D OPALE   (France)

^d UNIVERSITÉ DE BRETAGNE OCCIDENTALE   (France)

Author keywords

Agile devices; Ferroelectrics; Thin films

Indexed keywords

BISMUTH COMPOUNDS; DIELECTRIC LOSSES; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; NIOBIUM COMPOUNDS; POTASSIUM COMPOUNDS; STRONTIUM COMPOUNDS; TANTALUM COMPOUNDS; THIN FILM CIRCUITS;

AGILE DEVICES; BULK MATERIALS; CURIE-WEISS TEMPERATURE; DIELECTRIC MEASUREMENTS; EPITAXIALLY GROWN; GROWTH OF THIN FILMS; MICROWAVE TEST; VARIOUS SUBSTRATES;

THIN FILMS;

EID: 49149085816     PISSN: 01411594     EISSN: 10290338     Source Type: Journal    
DOI: 10.1080/01411590801924482     Document Type: Review

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