CVD growth of In2O3 nanowires using a mixed source of indium and indium chloride

Journal of the Electrochemical Society

Volumn 155, Issue 9, 2008, Pages

  Kuo, D H ^a   Hsu, C W ^b   Liang, C H ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION;

INDIUM;

EID: 49149084022     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2952822     Document Type: Article

References (26)

1. I. Hamburg and C. G. Granqvist, J. Appl. Phys. JAPIAU 0021-8979, 60, R 123 (1986).
2. P. Guha, S. Kar, and S. Chaudhuri, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1808886, 85, 3851 (2004).
3. S. Ishibashi, Y. Higuchi, Y. Oa, and K. Nakamura, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.576889, 8, 1399 (1990).
4. Z. M. Jarzebski, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.2210710102, 71, 13 (1982).
5. C. Li, D. Zhang, S. Han, X. Liu, T. Tang, and C. Zhou, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/adma.200390029, 15, 143 (2003).
6. T. Gao and T. Wang, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2006.01.046, 290, 660 (2006).
7. S. Kar and S. Chaudhuri, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/j.cplett.2006.03.002, 422, 424 (2006).
8. M. C. Johnson, S. Aloni, D. E. McCready, and E. D. Bourret-Courchesne, Cryst. Growth Des. CGDEFU 1528-7483 10.1021/cg050524g, 6, 1936 (2006).
9. D. Calestani, M. Zha, A. Zappettini, L. Lazzarini, and L. Zanotti, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/j.cplett.2007.07.089, 445, 251 (2007).
10. G. Jo, W. K. Hong, J. Maeng, T. W. Kim, G. Wang, A. Yoon, S. S. Kwon, S. Song, and T. Lee, Colloids Surf., A CPEAEH 0927-7757, 313-314, 308 (2008).
11. K. Kam, F. L. Deepak, A. K. Cheetham, and C., N. R. Rao, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/j.cplett.2004.08.129, 197, 329 (2004).
12. S. Li, Y. X. Liang, C. Wang, X. Q. Fu, and T. H. Wang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2191416, 88, 163111 (2006).
13. D. A. Magdas, A. Cremades, and J. Piqueras, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2185833, 88, 113107 (2006).
14. C. Liang, G. Meng, Y. Lei, F. Phillipp, and L. Zhang, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/1521-4095(200109)13:17<1330::AID- ADMA1330>3.0.CO;2-6, 13, 1330 (2001).
15. N. Takahashi, J. Ogasawara, and A. Koukitu, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(96)00751-8, 172, 298 (1997).
16. N. Takahashi, A. Niwa, T. Takahashi, T. Nakamura, M. Yoshioka, and Y. Momose, J. Mater. Chem. JMACEP 0959-9428 10.1039/b110974j, 12, 1573 (2002).
17. X. Y. Kong and Z. L. Wang, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(03)00650-1, 128, 1 (2003).
18. G. Cheng, E. Stern, S. Guthrie, M. A. Reed, R. Klie, Y. Hao, G. Meng, and L. Zhang, Appl. Phys. A APAMFC 0947-8396 10.1007/s00339-006-3706-x, 85, 233 (2006).
19. L. Dai, X. L. Chen, J. K. Jian, M. He, T. Zhou, and B. Q. Hu, Appl. Phys. A APAMFC 0947-8396 10.1007/s00339-002-1475-8, 75, 687 (2002).
20. Y. Li, Y. Bando and D. Golberg, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/adma.200304539, 15, 581 (2003).
21. H. Tsuchiya, T. Okahisa, F. Hasegawa, H. Okumura, and S. Yoshida, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.33.1747, 33, 1747 (1994).
22. J. S. Hwang, A. V. Kuznetsov, S. S. Lee, H. S. Kim, J. G. Choi, and P. J. Chong, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(94)90263-1, 142, 5 (1994).
23. H. Lee and J. S. Harris, Jr., J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(96)00472-1, 169, 689 (1996).
24. M. Rubenstein and E. Myers, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2423963, 113, 365 (1996).
25. A. Koukito, F. Hasegawa, and H. Seki, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922, 27, LI546 (1988).
26. J. Zhang, X. Qing, F. Jiang, and Z. Dai, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/S0009-2614(03)00272-0, 371, 311 (2003).