Innovative high voltage transistors for complex HV/RF SoCs in baseline CMOS

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2008, Pages 115-116

  Sonsky J ^a   Heringa, A ^a   Perez Gonzalez, J ^a   Benson, J ^a   Chiang, P Y ^b   Bardy, S ^c   Volokhine, I ^d  

^a NXP TSMC Research Center   (Belgium)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NXP SEMICONDUCTORS   (France)

^d NXP TSMC Research Center   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; CHLORINE COMPOUNDS; COMPETITION; ENERGY MANAGEMENT; INDUSTRIAL ECONOMICS; SECURITY SYSTEMS; TRANSISTORS;

CMOS TECHNOLOGIES; COST-COMPETITIVENESS; HIGH-VOLTAGE TRANSISTORS; INTERNATIONAL SYMPOSIUM; PORTABLE APPLICATIONS; POWER AMPLIFICATION; POWER MANAGEMENT; SHORT TIME; SINGLE CHIPS; SUB-100 NM; VLSI TECHNOLOGIES;

TECHNOLOGY;

EID: 49049101872     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2008.4530823     Document Type: Conference Paper

References (5)

1. A.W. Ludikhuize, Proc. ISPSD 2000, pp. 11-18, 2000.
2. J. Sonsky, Proc. IEDM 2005, pp. 385-388, 2005.
3. A. Heringa, accepted at ISPSD 2008.
4. J. Sonsky, Proc. ISPSD 2007, pp. 77-80, 2007.
5. M. Apostolidou, submitted to RFIC 2008.