메뉴 건너뛰기




Volumn 85, Issue 8, 2008, Pages 1754-1757

Modeling the formation of spontaneous wafer direct bonding under low temperature

Author keywords

Low temperature; Modeling; Nano scale roughness; Spontaneous wafer bonding

Indexed keywords

INTERFACIAL ENERGY; OPTICAL DESIGN; SILICON WAFERS;

EID: 48949116064     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.038     Document Type: Article
Times cited : (21)

References (12)
  • 4
    • 48949108320 scopus 로고    scopus 로고
    • S. Farrens, J. Dekker, in: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, Reno, NV, 1995, p. 184.
    • S. Farrens, J. Dekker, in: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, Reno, NV, 1995, p. 184.
  • 8
    • 48949108322 scopus 로고    scopus 로고
    • T. Martini, E. Schmidt, S. Mack, M. Reiche, H. Stenzel, S. Li, U. Gosele, Q. Tong, in: Proceedings of Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, Reno, NV, 1995, p. 147.
    • T. Martini, E. Schmidt, S. Mack, M. Reiche, H. Stenzel, S. Li, U. Gosele, Q. Tong, in: Proceedings of Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, Reno, NV, 1995, p. 147.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.