-
1
-
-
0027614839
-
Quantum well intermixing
-
J. H. Marsh, "Quantum well intermixing," Semicond. Sci. Technol., vol. 8, pp. 1136-1155, 1993.
-
(1993)
Semicond. Sci. Technol
, vol.8
, pp. 1136-1155
-
-
Marsh, J.H.1
-
2
-
-
0032114589
-
Photonic integrated circuits fabricated using ion implantation
-
Jul./Aug
-
S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, "Photonic integrated circuits fabricated using ion implantation," IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 4, pp. 772-793, Jul./Aug. 1998.
-
(1998)
IEEE J. Sel. Topics Quantum Electron
, vol.4
, Issue.4
, pp. 772-793
-
-
Charbonneau, S.1
Koteles, E.S.2
Poole, P.J.3
He, J.J.4
Aers, G.C.5
Haysom, J.6
Buchanan, M.7
Feng, Y.8
Delage, A.9
Yang, F.10
Davies, M.11
Goldberg, R.D.12
Piva, P.G.13
Mitchell, I.V.14
-
3
-
-
0036661969
-
A quantum-well-intermixing process for wavelength-agile photonic integrated circuits
-
Jul./Aug
-
E. J. Skogen, J. S. Barton, S. P. Denbaars, and L. A. Coldren, "A quantum-well-intermixing process for wavelength-agile photonic integrated circuits," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 863-869, Jul./Aug. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron
, vol.8
, Issue.4
, pp. 863-869
-
-
Skogen, E.J.1
Barton, J.S.2
Denbaars, S.P.3
Coldren, L.A.4
-
4
-
-
0031257832
-
Selective quantum well intermixing in GaAs/AlGaAs structures using impurity-free vacancy diffusion
-
Oct
-
B. S. Ooi, K. McIlvaney, M. W. Street, A. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, "Selective quantum well intermixing in GaAs/AlGaAs structures using impurity-free vacancy diffusion," IEEE J. Quantum Electron., vol. 33, no. 10, pp. 1784-1793, Oct. 1997.
-
(1997)
IEEE J. Quantum Electron
, vol.33
, Issue.10
, pp. 1784-1793
-
-
Ooi, B.S.1
McIlvaney, K.2
Street, M.W.3
Helmy, A.4
Ayling, S.G.5
Bryce, A.C.6
Marsh, J.H.7
Roberts, J.S.8
-
5
-
-
0000412123
-
Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing
-
S. Yuan, Y. Kim, C. Jagadish, P. T. Burke, M. Gal, J. Zou, D. Q. Cai, D. J. H. Cockayne, and R. M. Cohen, "Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing," Appl. Phys. Lett., vol. 70, pp. 1269-1271, 1997.
-
(1997)
Appl. Phys. Lett
, vol.70
, pp. 1269-1271
-
-
Yuan, S.1
Kim, Y.2
Jagadish, C.3
Burke, P.T.4
Gal, M.5
Zou, J.6
Cai, D.Q.7
Cockayne, D.J.H.8
Cohen, R.M.9
-
6
-
-
0000161612
-
A universal damage induced technique for quantum well intermixing
-
O. P. Kowalski, C. J. Hamilton, S. D. McDougall, J. H. Marsh, A. C. Bryce, R. M. De La Rue, B. Vogele, and C. R. Stanley, "A universal damage induced technique for quantum well intermixing," Appl. Phys. Lett., vol. 72, pp. 581-583, 1998.
-
(1998)
Appl. Phys. Lett
, vol.72
, pp. 581-583
-
-
Kowalski, O.P.1
Hamilton, C.J.2
McDougall, S.D.3
Marsh, J.H.4
Bryce, A.C.5
De La Rue, R.M.6
Vogele, B.7
Stanley, C.R.8
-
7
-
-
2442556121
-
Multiple-wavelength integration of InGaAs/InGaAsP structures using pulsed laser irradiation induced quantum well intermixing
-
May
-
B. S. Ooi, T. K. Ong, and O. Gunawan, "Multiple-wavelength integration of InGaAs/InGaAsP structures using pulsed laser irradiation induced quantum well intermixing," IEEE J. Quantum Electron, vol. 40, no. 5, pp. 481-490, May 2004.
-
(2004)
IEEE J. Quantum Electron
, vol.40
, Issue.5
, pp. 481-490
-
-
Ooi, B.S.1
Ong, T.K.2
Gunawan, O.3
-
8
-
-
18844366461
-
Plasma induced quantum well intermixing for monolithic photonic integration
-
Mar.-Apr
-
H. S. Djie and T. Mei, "Plasma induced quantum well intermixing for monolithic photonic integration," IEEE J. Select. Topics Quantum Electron., vol. 11, no. 2, pp. 373-382, Mar.-Apr. 2005.
-
(2005)
IEEE J. Select. Topics Quantum Electron
, vol.11
, Issue.2
, pp. 373-382
-
-
Djie, H.S.1
Mei, T.2
-
9
-
-
0036662299
-
Low-energy ion-implantation induced quantum well intermixing
-
Jul./Aug
-
V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, "Low-energy ion-implantation induced quantum well intermixing," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 870-879, Jul./Aug. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron
, vol.8
, Issue.4
, pp. 870-879
-
-
Aimez, V.1
Beauvais, J.2
Beerens, J.3
Morris, D.4
Lim, H.S.5
Ooi, B.S.6
-
10
-
-
0003978311
-
-
Chichester, U.K, Wiley
-
D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures. Chichester, U.K.: Wiley, 1998.
-
(1998)
Quantum Dot Heterostructures
-
-
Bimberg, D.1
Grundmann, M.2
Ledentsov, N.N.3
-
11
-
-
0000198357
-
Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
-
R. Leon, Y. Kim, C. Jagadish, M. Gal, J. Zou, and D. J. H. Cockayne, "Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots," Appl. Phys. Lett., vol. 69, pp. 1888-1890, 1996.
-
(1996)
Appl. Phys. Lett
, vol.69
, pp. 1888-1890
-
-
Leon, R.1
Kim, Y.2
Jagadish, C.3
Gal, M.4
Zou, J.5
Cockayne, D.J.H.6
-
12
-
-
0000500620
-
Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties:Quantum dot intermixing
-
D. Bhattacharyya, A. S. Helmy, A. C. Bryce, E. A. Avrutin, and J. H. Marsh, "Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties:Quantum dot intermixing," J. Appl. Phys., vol. 88, pp. 4619-4622, 2000.
-
(2000)
J. Appl. Phys
, vol.88
, pp. 4619-4622
-
-
Bhattacharyya, D.1
Helmy, A.S.2
Bryce, A.C.3
Avrutin, E.A.4
Marsh, J.H.5
-
13
-
-
33344478309
-
Electronics states of interdiffused quantum dots
-
O. Gunawan, H. S. Djie, and B. S. Ooi, "Electronics states of interdiffused quantum dots," Phys. Rev. B, vol. 71, pp. 205319-1-205319-10, 2005.
-
(2005)
Phys. Rev. B
, vol.71
-
-
Gunawan, O.1
Djie, H.S.2
Ooi, B.S.3
-
14
-
-
33646356483
-
Group-III vacancy induced InGaAs quantum-dot interdiffusion
-
H. S. Djie, O. Gunawan, D.-N. Wang, B. S. Ooi, and J. C. M. Hwang, "Group-III vacancy induced InGaAs quantum-dot interdiffusion," Phys. Rev. B, vol. 73, pp. 155324-1-155324-5, 2006.
-
(2006)
Phys. Rev. B
, vol.73
-
-
Djie, H.S.1
Gunawan, O.2
Wang, D.-N.3
Ooi, B.S.4
Hwang, J.C.M.5
-
15
-
-
33750021426
-
Quantum-confined stark effect in interdiffused quantum dots
-
Y. Wang, H. S. Djie, and B. S. Ooi, "Quantum-confined stark effect in interdiffused quantum dots," Appl. Phys. Lett., vol. 89, pp. 151104-1-151104-3, 2006.
-
(2006)
Appl. Phys. Lett
, vol.89
-
-
Wang, Y.1
Djie, H.S.2
Ooi, B.S.3
-
16
-
-
29744453926
-
Neutral ion implantation induced selective quantum dot intermixing
-
H. S. Djie, B. S. Ooi, and V. Aimez, "Neutral ion implantation induced selective quantum dot intermixing," Appl. Phys. Lett., vol. 87, pp. 261102-1-261102-3, 2005.
-
(2005)
Appl. Phys. Lett
, vol.87
-
-
Djie, H.S.1
Ooi, B.S.2
Aimez, V.3
-
17
-
-
33747819798
-
Quantum dot intermixing using excimer laser irradiation
-
H. S. Djie, B. S. Ooi, and O. Gunawan, "Quantum dot intermixing using excimer laser irradiation," Appl. Phys. Lett., vol. 89, pp. 081901-1-081901-3, 2006.
-
(2006)
Appl. Phys. Lett
, vol.89
-
-
Djie, H.S.1
Ooi, B.S.2
Gunawan, O.3
-
18
-
-
33747363444
-
Intermixing of InGaAs quantum-dots grown by cycled monolayer deposition
-
H. S. Djie, D.-N. Wang, B. S. Ooi, J. C. M. Hwang, X.-M. Fang, Y. Wu, J. M. Fastenau, and W. K. Liu, "Intermixing of InGaAs quantum-dots grown by cycled monolayer deposition," J. Appl. Phys., vol. 100, pp. 030527-1-030527-6, 2006.
-
(2006)
J. Appl. Phys
, vol.100
-
-
Djie, H.S.1
Wang, D.-N.2
Ooi, B.S.3
Hwang, J.C.M.4
Fang, X.-M.5
Wu, Y.6
Fastenau, J.M.7
Liu, W.K.8
-
19
-
-
33645159253
-
Group III intermixing in InAs/InAlGaAs quantum dots-in-well
-
Y. Wang, H. S. Djie, and B. S. Ooi, "Group III intermixing in InAs/InAlGaAs quantum dots-in-well," Appl. Phys. Lett., vol. 88, pp. 111110-1-111110-3, 2006.
-
(2006)
Appl. Phys. Lett
, vol.88
-
-
Wang, Y.1
Djie, H.S.2
Ooi, B.S.3
-
20
-
-
0036698186
-
Analysis of strain-induced polarisation insensitive integrated-waveguides fabricated using ion implantation-induced intermixing
-
H. S. Djie, S. L. Ng, O. Gunawan, P. Dowd, V. Aimez, J. Beauvais, and J. Beerens, "Analysis of strain-induced polarisation insensitive integrated-waveguides fabricated using ion implantation-induced intermixing," in Proc. Inst. Elect. Eng. Optoelectron., 2002, vol. 149, pp. 138-144.
-
(2002)
Proc. Inst. Elect. Eng. Optoelectron
, vol.149
, pp. 138-144
-
-
Djie, H.S.1
Ng, S.L.2
Gunawan, O.3
Dowd, P.4
Aimez, V.5
Beauvais, J.6
Beerens, J.7
-
22
-
-
13644273758
-
GaAs/AlGaAs quantum well intermixing using high-density Argon plasma
-
H. S. Djie, T. Mei, and J. Arokiaraj, "GaAs/AlGaAs quantum well intermixing using high-density Argon plasma," Semicond. Sci. Technol., vol. 20, pp. 244-249, 2005.
-
(2005)
Semicond. Sci. Technol
, vol.20
, pp. 244-249
-
-
Djie, H.S.1
Mei, T.2
Arokiaraj, J.3
-
23
-
-
19944433510
-
Thermally induced diffusion study of GaInNAs/GaAs and GaInAs/GaAs quantum well structure grown by solid source molecular beam epitaxy
-
T. K. Ng, H. S. Djie, S. F. Yoon, and T. Mei, "Thermally induced diffusion study of GaInNAs/GaAs and GaInAs/GaAs quantum well structure grown by solid source molecular beam epitaxy," J. Appl. Phys., vol. 97, pp. 013506-1-013506-8, 2005.
-
(2005)
J. Appl. Phys
, vol.97
-
-
Ng, T.K.1
Djie, H.S.2
Yoon, S.F.3
Mei, T.4
-
24
-
-
27144542680
-
Interdiffusion in InGaAsSb/AlGaAsSb quantum wells
-
Y. Wang, H. S. Djie, and B. S. Ooi, "Interdiffusion in InGaAsSb/AlGaAsSb quantum wells," J. Appl. Phys., vol. 98, pp. 073508-1-073508-7, 2005.
-
(2005)
J. Appl. Phys
, vol.98
-
-
Wang, Y.1
Djie, H.S.2
Ooi, B.S.3
-
25
-
-
33846228632
-
Defect annealing of InAs/InAlGaAs quantum-dashin- asymmetric-well laser
-
Nov
-
H. S. Djie, Y. Wang, B. S. Ooi, D. N. Wang, J. C. M. Hwang, G. T. Dang, and W. H. Chang, "Defect annealing of InAs/InAlGaAs quantum-dashin- asymmetric-well laser," IEEE Photon. Technol. Lett., vol. 18, no. 22, pp. 2329-2331, Nov. 2006.
-
(2006)
IEEE Photon. Technol. Lett
, vol.18
, Issue.22
, pp. 2329-2331
-
-
Djie, H.S.1
Wang, Y.2
Ooi, B.S.3
Wang, D.N.4
Hwang, J.C.M.5
Dang, G.T.6
Chang, W.H.7
-
26
-
-
0032292252
-
Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect
-
Dec
-
Y. Matsui, H. Murai, S. Arahira, Y. Ogawa, and A. Suzuki, "Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect," IEEE J. Quantum Electron., vol. 34, no. 12, pp. 2340-2349, Dec. 1998.
-
(1998)
IEEE J. Quantum Electron
, vol.34
, Issue.12
, pp. 2340-2349
-
-
Matsui, Y.1
Murai, H.2
Arahira, S.3
Ogawa, Y.4
Suzuki, A.5
-
27
-
-
0004876492
-
Segregation and interdiffusion of In atoms in GaAs/InAs/GaAs heterostructures
-
T. Kawai, H. Yonezu, Y. Ogaswara, D. Saito, and L. Park, "Segregation and interdiffusion of In atoms in GaAs/InAs/GaAs heterostructures," Appl. Phys. Lett., vol. 74, pp. 1770-1772, 1993.
-
(1993)
Appl. Phys. Lett
, vol.74
, pp. 1770-1772
-
-
Kawai, T.1
Yonezu, H.2
Ogaswara, Y.3
Saito, D.4
Park, L.5
-
28
-
-
4344634808
-
Improved performance of 1.3 μm multilayer InAs quantum-dots lasers using a high-growth-temperature GaAs spacer layer
-
H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, K. M. Groom, M. Gutierrez, M. Hopkinson, J. S. Ng, J. P. R. David, and R. Beanland, "Improved performance of 1.3 μm multilayer InAs quantum-dots lasers using a high-growth-temperature GaAs spacer layer," Appl. Phys. Lett., vol. 85, pp. 704-706, 2004.
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 704-706
-
-
Liu, H.Y.1
Sellers, I.R.2
Badcock, T.J.3
Mowbray, D.J.4
Skolnick, M.S.5
Groom, K.M.6
Gutierrez, M.7
Hopkinson, M.8
Ng, J.S.9
David, J.P.R.10
Beanland, R.11
-
29
-
-
0346594273
-
Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface
-
R. J. Baird, T. J. Potter, G. P. Kothiyal, and P. K. Bhattacharya, "Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface," Appl. Phys. Lett., vol. 52, pp. 2055-2054, 1988.
-
(1988)
Appl. Phys. Lett
, vol.52
, pp. 2055-2054
-
-
Baird, R.J.1
Potter, T.J.2
Kothiyal, G.P.3
Bhattacharya, P.K.4
-
30
-
-
33846247941
-
Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing
-
H. S. Djie, Y. Wang, B. S. Ooi, D.-N. Wang, J. C. M. Hwang, Y. Wu, X.-M. Fang, J. M. Fastenau, W. K. Liu, G. T. Dang, and W. H. Chang, "Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing," Electron. Lett., vol. 43, pp. 33-35, 2007.
-
(2007)
Electron. Lett
, vol.43
, pp. 33-35
-
-
Djie, H.S.1
Wang, Y.2
Ooi, B.S.3
Wang, D.-N.4
Hwang, J.C.M.5
Wu, Y.6
Fang, X.-M.7
Fastenau, J.M.8
Liu, W.K.9
Dang, G.T.10
Chang, W.H.11
-
31
-
-
33846462436
-
Postgrowth wavelength engineering of InAs/InAlGaAs quantum-dash laser
-
H. S. Djie, Y. Wang, D. Negro, and B. S. Ooi, "Postgrowth wavelength engineering of InAs/InAlGaAs quantum-dash laser," Appl. Phys. Lett., vol. 90, no. 3, pp. 031101-1-031101-3, 2007.
-
(2007)
Appl. Phys. Lett
, vol.90
, Issue.3
-
-
Djie, H.S.1
Wang, Y.2
Negro, D.3
Ooi, B.S.4
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