Phonon-defect scattering in doped silicon by molecular dynamics simulation

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  Yao, M ^a,b   Watanabe, T ^b   Schelling, P K ^c   Keblinski, P ^d   Cahill, D G ^e   Phillpot, S R ^b  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b University of Florida   (United States)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

^d RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^e University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DYNAMICS; MIXING; MOLECULAR DYNAMICS; NANOFLUIDICS; NONMETALS; PARAMETER ESTIMATION; PHONONS; POINT DEFECTS; QUANTUM CHEMISTRY; SCATTERING; SILICON; THERMAL CONDUCTIVITY;

DOPED SILICON; MODE MIXING; MOLECULAR DYNAMICS SIMULATION; MOLECULAR DYNAMICS SIMULATIONS; MULTIPLE-SCATTERING; PHONON DENSITY OF STATES; PHONON FIELDS; PHONON SCATTERING PROCESS; PHONON WAVE PACKETS; PHONON-DEFECT SCATTERING; RELATIVE AMOUNTS; SCATTERING STRENGTH;

DEFECTS;

EID: 48849110986     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2959840     Document Type: Article

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