Optical evaluation of carrier lifetime and diffusion length in synthetic diamonds

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1212-1215

  Malinauskas, T ^a   Jarasiunas, K ^a   Ivakin, E ^b   Ralchenko, V ^c   Gontar, A ^d   Ivakhnenko, S ^d  

^a VILNIUS UNIVERSITY   (Lithuania)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^c PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^d BAKUL INSTITUTE FOR SUPERHARD MATERIALS   (Ukraine)

Author keywords

Carrier diffusion; Carrier lifetime; Diamond; Transient grating technique

Indexed keywords

CARRIER LIFETIME; DIAMONDS; PHOTOEXCITATION; SEMICONDUCTOR DOPING;

AMBIPOLAR DIFFUSION; BAND GAPS; CARRIER DIFFUSION; CHEMICAL-; DIAMOND; DIFFUSION LENGTHS; ELECTRONIC PARAMETERS; HIGH TEMPERATURES; INTERBAND; OPTICAL-; PICO SECONDS; TRANSIENT GRATING; TRANSIENT GRATING TECHNIQUE;

SYNTHETIC DIAMONDS;

EID: 48849103449     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.01.005     Document Type: Article

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