Exposure and development of poly (methyl methacrylate) using 254nm light source and IPA/water

Canadian Conference on Electrical and Computer Engineering

Volumn , Issue , 2007, Pages 1668-1670

  Johnstone, Robert W ^a   Foulds, Ian G ^a   Parameswaran, M ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

254nm light source; DUV patterning; PMMA; Polymethyl methacrylate

Indexed keywords

ESTERS; LIGHT; LIGHT SOURCES; LIGHTING; QUANTUM OPTICS;

DEEP UV (DUV); DEVELOPER TEMPERATURE; ELECTRICAL AND COMPUTER ENGINEERING (ECE); ETCH DEPTH; ETCH TIME; PHOTO-PATTERNING; PMMA FILMS; POLY METHYL METHACRYLATE (PMMA); RADIATION SOURCES; UPPER LIMITS;

ELECTRON BEAM LITHOGRAPHY;

EID: 48749106317     PISSN: 08407789     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CCECE.2007.417     Document Type: Conference Paper

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