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Volumn 225, Issue 3, 1984, Pages 608-614

Semiconductor drift chamber - An application of a novel charge transport scheme

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; PHYSICS - HIGH ENERGY;

EID: 48549113488     PISSN: 01675087     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-5087(84)90113-3     Document Type: Article
Times cited : (656)

References (11)
  • 1
    • 84912462477 scopus 로고
    • Silicon Detectors for High Energy Physics
    • For example, University of Rochester
    • (1981) Proc. FNAL
  • 5
    • 84912415341 scopus 로고    scopus 로고
    • We are indebted to R.H. Beuttenmuller for the fabrication of the device.
  • 6
    • 84912447184 scopus 로고    scopus 로고
    • A similar abrupt drop in capacitance was observed at depletion of a more complicated structure composed of multiple pn alternating layers completely depleted and forming multiple gutter-like focusing potential channels for electrons and holes: F. Capasso, IEEE Trans. Electron Devices ED-29 (1982) 1388.
  • 9
    • 84912455068 scopus 로고    scopus 로고
    • E. Gatti and P. Rehak, to be published in Nucl. Instr. and Meth.
  • 10
    • 84912445365 scopus 로고    scopus 로고
    • We are indebted to G. Lutz from Max Planck Institute in München for bringing our attention to this point.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.