Damage induced by high energy multiply charged oxygen ions in oxide coated silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 244, Issue 2, 2006, Pages 354-358

  Dhole, S D ^a   Dahiwale, S S ^a   Kulkarni, V R ^a   Bogle, K A ^a   Shinde, N S ^b   Bhoraskar, V N ^a  

^a UNIVERSITY OF PUNE   (India)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Electronic energy loss; Lifetime; Multiple charge state; Oxygen ion; Si SiO2 layer

Indexed keywords

ELECTRONIC ENERGY LOSS; LIFETIME; MULTIPLE CHARGE STATE; OXYGEN ION; SI-SIO2 LAYER;

CARRIER CONCENTRATION; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; IONS; OXYGEN;

SILICON;

EID: 48549085573     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.09.006     Document Type: Article

References (24)

1. S. Share, A.S. Epstein, V. Kumar, W.E. Dahlke, and W. Haller J. Appl. Phys. 45 11 1974 4894
2. B.K. Wertheim Phys. Rev. 111 1958 1500
3. S.D. Botherton, and P. Bradley J. Appl. Phys. 53 1982 5720
4. H.J. Stein, and R. Geneth J. Appl. Phys. 39 1968 2890
5. A.O. Evwaraye, and E. Sum J. Appl. Phys. 47 1976 3776
6. R.L. Pease, E.W. Enlow, G.L. Dinger, and P. Marshall IEEE Trans. Nucl. Sci. NS-34 1987 1140
7. S. Padgaonkar, S.D. Dhole, and V.N. Bhoraskar J. Phys. D 24 1991 702
8. S.D. Dhole, and V.N. Bhoraskar Nucl. Instr. and Meth. 73 1993 324
9. H.E. Boesch, F.B. Mclean, J.M. Benedatto, and J.M. McGarrity IEEE Trans. Nucl. Sci. NS-33 1986 1191
10. B.T. Kelly Irradiation Damage to Solid 1966 Pergamon p. 4
11. H. Ogawa, I. Katayama, I. Sugai, Y. Haruyama, M. Saito, K. Yoshida, M. Tosaki, and H. Ikegami Nucl. Instr. and Meth. B 82 1993 80
12. N.E.B. Cohern, P.M. Read, C.J. Sofield, L.B. Bridwell, G. Huxtable, M. Miller, and M.W. Lucas Nucl. Instr. and Meth. B 2 1984 112 115
13. M. Jung, M. Schosnig, K. Kroneberger, M. Tobisch, R. Maier, M. Kuzel, C. Fiedler, D. Hofmann, and K.O. Groeneveld Nucl. Instr. and Meth. B 86 1994 194
14. T. Schenkel, M.A. Briere, A.V. Barnes, A.V. Hamza, K. Bethge, H. Schmidt-Böcking, and D.H. Schneider Phys. Rev. Lett. 79 1997 2030
15. B. Rosner, private communication, Department of Physics Technion, Israel Institute of Technology, 32000 Haifa, Israel.
16. W. Huang, Hebius, and R. Schuch Phys. Rev. A 58 4 1998 2962
17. A. Blazevic, H.G. Bohlen, and W. Von Oertzen Phys. Rev. A 61 2000
18. E. Chason, T.M. Mayer, D. Wu, and A. Payne Appl. Phys. Lett. 60 19 1992 2353
19. R.A. Cowley, and T.W. Ryan J. Phys. D: Appl. Phys. 20 1987 61
20. L.G. Parratt Phys. Rev. 95 1954 359
21. V.N. Bhoraskar Ind. J. Phys. 62A 1988 716
22. V.N. Bhoraskar, S.D. Dhole, Surjit Singh, S.M. Jahangirdar, and K.S. Srinivas Nucl. Instr. and Meth. B 62 1991 99
23. P. Raichoudhary, J. Bartko, and J.E. Johnson IEEE Trans. Electron Devices ED-23 1976 814
24. T.W. Sigmon, W.K. Chu, E. Lugujjo, and J.W. Mayer Appl. Phys. Lett. 24 3 1974 105