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Volumn 78, Issue 3, 2008, Pages

High-temperature annealing and surface photovoltage shifts on Si (111) 7×7

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EID: 48449104204     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.035318     Document Type: Article
Times cited : (23)

References (18)
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    • PRBMDO 0163-1829 10.1103/PhysRevB.28.7014
    • F. J. Himpsel, G. Hollinger, and R. A. Pollak, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.28.7014 28, 7014 (1983). Note that this study gave EF - EVBM 0.63±0.05 eV for Si (111) 7×7, but a modified value is 0.65 eV reported in Ref..
    • (1983) Phys. Rev. B , vol.28 , pp. 7014
    • Himpsel, F.J.1    Hollinger, G.2    Pollak, R.A.3
  • 11
    • 0001405824 scopus 로고    scopus 로고
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    • R. Losio, K. N. Altmann, and F. J. Himpsel, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.10845 61, 10845 (2000).
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    • Losio, R.1    Altmann, K.N.2    Himpsel, F.J.3
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    • Alonso, M.1    Cimino, R.2    Horn, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.