Device scaling effect on the spectral absorptance of wafer front side

14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Volumn , Issue , 2006, Pages 267-283

  Fu, Kang ^a   Chen, Yu Bin ^b   Hsu, Pei Feng ^a   Zhang, Zhuomin M ^b  

^a Florida Institute of Technology ^*  (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBED ENERGIES; ABSORPTANCE; ANGLE OF INCIDENCES; CRITICAL PROBLEMS; DIFFERENT EFFECTS; EFFECTIVE MEDIUM THEORIES; EFFECTS OF TEMPERATURES; FEATURE DIMENSIONS; FEATURE SIZES; FINITE-DIFFERENCE TIME-DOMAIN METHODS; HEAT SOURCES; IMPLANTED DOPANTS; LAMP ANNEALING; NEW GENERATIONS; NON UNIFORMS; NUMERICAL SOLUTIONS; PARAMETRIC STUDIES; PATTERNED WAFERS; RADIATIVE PROPERTIES; RIGOROUS COUPLED WAVES; SCALING EFFECTS; SILICON SUBSTRATES; SPECTRAL DISTRIBUTIONS; WAFER SURFACES;

CRYSTALS; DIFFERENCE EQUATIONS; ELECTRIC CONDUCTIVITY; INTERNET PROTOCOLS; MAXWELL EQUATIONS; METHOD OF MOMENTS; NUMERICAL ANALYSIS; OPTICAL PROPERTIES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON WAFERS; SUBSTRATES; TIME DOMAIN ANALYSIS; WAVE EQUATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 48349103753     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2006.368011     Document Type: Conference Paper

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