High mobility electron-conducting thin-film transistors by organic vapor phase deposition

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Rolin, C ^a,b   Vasseur, K ^a,c   Schols, S ^a,c   Jouk, M ^a,d   Duhoux, G ^a,c   Muller R ^a   Genoe, J ^a   Heremans, P ^a,c  

^a IMEC   (Belgium)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION RATES; ELECTRIC PROPERTIES; HIGH ELECTRON MOBILITY TRANSISTORS; THICK FILMS; THIN FILM TRANSISTORS; TRANSISTORS; VAPORS;

AMERICAN INSTITUTE OF PHYSICS (AIP); CONTACT TRANSISTORS; DEPOSITION PARAMETERS; ELECTRICAL (ELECTRONIC) PROPERTIES; GROWTH OF THIN FILMS; HIGH MOBILITY; MATERIAL UTILIZATION; ORGANIC VAPOR PHASE DEPOSITION (OVPD); THIN FILM TRANSISTOR (TFT); UNIFORM FILMS;

VAPOR DEPOSITION;

EID: 48249149199     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2958229     Document Type: Article

References (21)

1. C. R. Newman, C. D. Frisbie, D. A. da Silva Filho, J.-L. Bŕdas, P. C. Ewbank, and K. R. Mann, Chem. Mater. 16, 4436 (2004).
2. A. Facchetti, M. Mushrush, H. E. Katz, and T. J. Marks, Adv. Mater. (Weinheim, Ger.) 15, 33 (2003).
3. R. J. Chesterfield, C. R. Newman, T. M. Pappenfus, P. C. Ewbank, M. H. Haukaas, K. R. Mann, L. L. Miller, and C. D. Frisbie, Adv. Mater. (Weinheim, Ger.) 15, 1278 (2003).
4. H. E. Katz, A. J. Lovinger, J. Johnson, C. Kloc, T. Siegrist, W. Li, Y. Y. Lin, and A. Dodabalapur, Nature (London) 404, 478 (2000).
5. P. R. L. Malenfant, C. D. Dimitrakopoulos, J. D. Gelorme, L. L. Kosbar, T. O. Graham, A. Curioni, and W. Andreoni, Appl. Phys. Lett. 80, 2517 (2002).
6. OVPD is a technology by UDC exclusively licensed to AIXTRON for equipment manufacturing.
7. The term OVPD is a trademark of AIXTRON.
8. M. A. Baldo, M. Deutsch, P. E. Burrows, H. F. Gossenberger, M. Gerstenberg, V. S. Ban, and S. R. Forrest, Adv. Mater. (Weinheim, Ger.) 10, 1505 (1998).
9. F. Yang, M. Shtein, and S. R. Forrest, Nat. Mater. 4, 37 (2005).
10. F. Yang, K. Sun, and S. R. Forrest, Adv. Mater. (Weinheim, Ger.) 19, 4166 (2007).
11. M. Shtein, P. Peumans, J. B. Benziger, and S. R. Forrest, Adv. Mater. (Weinheim, Ger.) 16, 1615 (2004).
12. C. Rolin, S. Steudel, K. Myny, D. Cheyns, S. Verlaak, J. Genoe, and P. Heremans, Appl. Phys. Lett. 89, 203502 (2006).
13. R. J. Chesterfield, J. C. McKeen, C. R. Newman, P. C. Ewbank, D. A. da Silva, J.-L. Bŕdas, L. L. Miller, K. R. Mann, and C. D. Frisbie, J. Phys. Chem. B 108, 19281 (2004).
14. D. J. Gundlach, K. P. Pernstich, G. Wilckens, M. Gruter, S. Haas, and B. Batlogg, J. Appl. Phys. 98, 064502 (2005).
15. S. Tatemichi, M. Ichikawa, T. Koyama, and Y. Taniguchi, Appl. Phys. Lett. 89, 112108 (2006).
16. K. Yase, Y. Takahashi, N. Arakato, and A. Kawazu, Jpn. J. Appl. Phys., Part 1 34, 636 (1995).
17. M. Shtein, H. F. Gossenberger, J. B. Benziger, and S. R. Forrest, J. Appl. Phys. 89, 1470 (2001).
18. T. X. Zhou, T. Ngo, J. J. Brown, M. Shtein, and S. R. Forrest, Appl. Phys. Lett. 86, 021107 (2005).
19. The conversion is as follows: qorg,dep = rdep 1e-10 Asub δ where Asub =2e-3 m2 is the substrate area and δ=3320.7 mol m3 is the PTCDI- C13 H27 density, as given in Ref..
20. T. W. Kelley, P. F. Baude, C. Gerlach, D. E. Ender, D. Muyres, M. A. Haase, D. E. Vogel, and S. D. Theiss, Chem. Mater. 16, 4413 (2004).
21. C. Horowitz, Adv. Mater. (Weinheim, Ger.) 10, 365 (1998).