Thermoelectric properties of p-type Mg2Si0.6Ge 0.4 fabricated by bulk mechanical alloying and hot pressing

Physica Status Solidi - Rapid Research Letters

Volumn 1, Issue 6, 2007, Pages 226-228

  Song, R B ^a   Liu, Y Z ^a   Aizawa, T ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HOT PRESSING; MECHANICAL ALLOYING; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SOLID SOLUTIONS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

BULK MECHANICAL ALLOYING; ELECTRICAL CONDUCTIVITY; HOT PRESSING TEMPERATURE; PRESSING CONDITIONS; PROCESSING PARAMETERS; SOLID SOLUTION PHASE; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES;

SILICON ALLOYS;

EID: 48249130757     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200701188     Document Type: Article

References (6)

1. T. M. Tritt, Science 283, 804 (1999).
2. T. Aizawa, R. B. Song, and A. Yamamoto, Mater. Trans. 46, 1490 (2005).
3. R. Janot, F. Cuevas, M. Latroche, and A. Percheron-Guégan, Intermetallics 14, 163 (2006).
4. T. Aizawa and R. B. Song, Intermetallics 14, 382 (2006).
5. M. Yoshinaga, T. Iidao, M. Noda, T. Endo, and Y. Takanashi, Thin Solid Films 461, 86 (2004).
6. R. Song, T. Aizawa, A. Yamamoto, and T. Obara, J. Metastable Nanocryst. Mater. 24/25, 347 (2005).