FBAR characteristics with AlN film using MOCVD method and Ru/Ta electrode

Proceedings - IEEE Ultrasonics Symposium

Volumn , Issue , 2007, Pages 1425-1428

  Aota, Y ^a   Tanifuji, S ^a   Oguma, H ^a   Kameda, S ^a   Nakase, H ^a   Takagi, T ^a   Tsubouchi, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC EQUIPMENT; ACOUSTIC IMPEDANCE; ACOUSTIC RESONATORS; ACOUSTIC SURFACE WAVE FILTERS; ACOUSTICS; ELECTROLYSIS; FULL WIDTH AT HALF MAXIMUM; ION BEAM ASSISTED DEPOSITION; METALLIZING; METALS; MOLYBDENUM; NATURAL FREQUENCIES; OPTICAL DESIGN; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; PHOTORESISTS; SURFACE ROUGHNESS; ULTRASONICS;

ANTI-RESONANT; BOTTOM ELECTRODES; BUTTERWORTH; ELECTRO-MECHANICAL COUPLING COEFFICIENT; FILM BULK ACOUSTIC RESONATOR; HEXAGONAL CRYSTALLINE; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; RESONANT CHARACTERISTICS; RESONANT FREQUENCIES;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 48149086554     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULTSYM.2007.358     Document Type: Conference Paper

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