First-principles study of transport of V doped boron nitride nanotube

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 372, Issue 34, 2008, Pages 5609-5613

  Yao, K L ^a,b   Min, Y ^a   Liu, Z L ^a   Cheng, H G ^a   Zhu, S C ^a   Gao, G Y ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

First principles; One dimensional; Spin filter; Tunnel magnetoresistance

Indexed keywords

BORON NITRIDE; CALCULATIONS; ELECTRODES; III-V SEMICONDUCTORS; NANOTUBES; NITRIDES; ONE DIMENSIONAL; QUANTUM CHEMISTRY; VOLTAGE SCALING;

BORON NITRIDE NANOTUBES; FIRST PRINCIPLES; FIRST-PRINCIPLES CALCULATION; MAGNETIC CONFIGURATION; NONEQUILIBRIUM TRANSPORT; SPIN FILTERS; TRANSMISSION COEFFICIENTS; TUNNEL MAGNETORESISTANCE;

TUNNELLING MAGNETORESISTANCE;

EID: 47949103206     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.06.060     Document Type: Article

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