Metal-insulator transition and conduction mechanism in dysprosium doped Bi1.7Pb0.4Sr2Ca1.1Cu 2.1O8+δ system

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

  Shabna, R ^a   Sarun, P M ^a   Vinu, S ^a   Biju, A ^a   Guruswamy, P ^a   Syamaprasad, U ^a  

^a REGIONAL RESEARCH LABORATORY CSIR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH PLATING; COPPER COMPOUNDS; DYSPROSIUM; HIGH TEMPERATURE SUPERCONDUCTORS; MECHANISMS; METAL INSULATOR BOUNDARIES; METALS; SEMICONDUCTOR INSULATOR BOUNDARIES;

CHARGE TRANSPORTING; CONDUCTION MECHANISMS; HIGH TEMPERATURE SUPERCONDUCTING CUPRATES (HTSC); METAL-INSULATOR (M-I) TRANSITION; SYSTEMATIC STUDY;

METAL INSULATOR TRANSITION;

EID: 47749126561     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2951955     Document Type: Article

References (15)

1. M. Imada, A. Fujimori, and Y. Tokura, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.70.1039 70, 1039 (1998), and references therein.
2. J. B. Torrance, Y. Tokura, A. I. Nazzul, Bezinge, T. C. Huang, and S. S. P. Perkin, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.61.1127 61, 1127 (1988).
3. B. Batlogg, Phys. Today 0031-9228 44 (6), 44 (1991).
4. X. Sun, X Zhao, W. Wu, X. Fan, X. G. Li and H. C. Ku, Physica C 0921-4534 10.1016/S0921-4534(98)00413-4, 307, 67 (1998).
5. T. Hasegawa, K. Kishio, M. Aoki, N. Ooba, K. Kitizawa, K. Fueki, S. Uchida, and S. Tanaka, Jpn. J. Appl. Phys., Part 1 26, L337 (1987). 0340-3793
6. J. D. Jorgensen, M. A. Beno, D. G. Hinks, L. Soderholm, K. J. Volin, R. L. Hitterman, J. D. Grace, I. K. Schuller, C. V. Segre, K. Zhang and M. S. Kleefisch, Phys. Rev. B 0163-1829 10.1103/PhysRevB.36.3608 36, 3608 (1987).
7. M. W. Shafer, T. Penney, and B. L. Olson, Phys. Rev. B 0163-1829 10.1103/PhysRevB.36.4047 36, 4047 (1987).
8. B. Zhao, W. H. Song, J. J. Du, and Y. P. Sun, Physica C 0921-4534 10.1016/S0921-4534(02)02146-9 386, 60 (2003).
9. H. Fujii, Y. Hishinuma, H. Kitaguchi, H. Kumakura and K. Togano, Physica C 0921-4534 10.1016/S0921-4534(99)00621-8, 331, 79 (2000).
10. B. Ellman, H. M. Jaeger, D. P. Katz, T. F. Rosenbaum, A. S. Cooper, and G. P. Espinosa, Phys. Rev. B 0163-1829 10.1103/PhysRevB.39.9012 39, 9012 (1989).
11. N. F. Mott and E. A. Davis, Electronic Processes in Noncrystalline Materials (Clarendon, Oxford, 1979), and references therein.
12. P. W. Anderson, Phys. Rev.. 109, 1492 (1958).
13. B. I. Shklovski and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984), and references therein.
14. D. Emin, Electronic and Structural Properties of Amorphous Semiconductors, edited by, P. G. Le Comber, and, J. Mort, (Academic, Lodon, 1973).
15. J. Valles, Jr., A. E. White, K. T. Short, R. C. Dynes, J. P. Garno, A. F. J. Levi, M. Anzlower, and K. Baldwin, Phys. Rev. B 0163-1829 10.1103/PhysRevB.39.11599 39, 11599 (1989).