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Here we remedy an error in handling parameter M2 in the previous paper (Ref.). Therein M2 =1.6 was determined from the data analysis. However, by confusion the estimated value of Mξ was divided by M=10 (instead of M=5×1.6=8) to give the result for ξ. Accordingly, the values of ξ in Fig. 3(e) of Ref. are somewhat smaller than what should have been shown. (For ease of comparison, this figure is reproduced in the inset of Fig. 2.) In the main panel of Fig. 2 and the rest of the present paper this error has been corrected: we use M2 =1.6 and M=8 throughout.
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Here we remedy an error in handling parameter M2 in the previous paper (Ref.). Therein M2 =1.6 was determined from the data analysis. However, by confusion the estimated value of Mξ was divided by M=10 (instead of M=5×1.6=8) to give the result for ξ. Accordingly, the values of ξ in Fig. 3(e) of Ref. are somewhat smaller than what should have been shown. (For ease of comparison, this figure is reproduced in the inset of Fig. 2.) In the main panel of Fig. 2 and the rest of the present paper this error has been corrected: we use M2 =1.6 and M=8 throughout.
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Exciton concentration n can be deduced from the exciton energy Ex =hc/ λ0 using the linear relation n= (C/ e2) [Ex - Ex (n=0)]. However, the value of the coefficient C is presently under debate. Earlier literature (Refs.) assumed that C is equal to the classical capacitance per unit area C=/ (4πd), where is the dielectric constant and d is the separation between the electron and hole layers. A more recent calculation (Ref.) gives an order of magnitude higher estimate for C and therefore n in our experiments.
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