Temperature-dependent photoluminescence from bicrystalline ZnS (core/shell) nanocables

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 372, Issue 33, 2008, Pages 5479-5483

  Zhang, Jun ^a   Jiang, Feihong ^a  

^a YANTAI UNIVERSITY   (China)

Author keywords

Nanocrystalline materials; Photoluminescence; Semiconductor

Indexed keywords

BLUE SHIFT; DEFECTS; ENERGY GAP; II-VI SEMICONDUCTORS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; RED SHIFT; SEMICONDUCTOR MATERIALS; SHRINKAGE; TEMPERATURE; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

CARRIER LOCALIZATION EFFECTS; CORE/SHELL; DEFECT LEVELS; GAUSSIAN PEAKS; INCREASING TEMPERATURES; NANOCABLES; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES;

SULFUR COMPOUNDS;

EID: 47349084352     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.06.043     Document Type: Article

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