A novel hafnium carbide (HfCx) metal gate electrode for NMOS device application

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 156-157

  Wan, Sik Hwang ^a   Chen, Shen ^a   Xing, Peng Wang ^a   Chan, Daniel S H ^a   Byung, Jin Cho ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM CARBIDE (HFC); VLSI TECHNOLOGIES;

HAFNIUM;

EID: 47249164313     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339764     Document Type: Conference Paper

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