Optical confinement in laser diodes based on nitrides of Group III elements. Part 2: Analysis of heterostructures on various substrates

Semiconductors

Volumn 42, Issue 7, 2008, Pages 852-857

  Slobodyan, T E ^a   Bulashevich, K A ^a,b   Karpov, S Yu ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b SOFT IMPACT LTD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47249158123     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782608070166     Document Type: Article

References (10)

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7. S. Nakamura, MRS J. Nitride Semicond. Res. 2, 5 (1997).
8. J. Piprek, R. K. Sink, M. A. Hansen, et al., in Physics and Simulation of Optoelectronic Devices VIII, Ed. by R. Binger, P. Blood, and M. Osinski, SPIE Proc. 3944-03, 28 (2000).
9. M. Kneissl, D. W. Treat, M. Teepe, et al., Appl. Phys. Lett. 82, 23856 (2003).
10. M. Röwe, P. Mishler, J. Gutowski, et al., Phys. Status Solidi A 188, 65 (2001).