Dedicated process architecture and the characteristics of 1.4 μm pixel CMOS image sensor with 8M density

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 62-63

  Moon, Chang Rok ^a   Shin, Jong Cheol ^a   Kim, Jinho ^a   Lee, Yun Ki ^a   Cho, Young Joon ^a   Yu, Yu Yeon ^a   Hwang, Seong Ho ^a   Park, Doo Cheol ^a   Park, Byung Jun ^a   Kim, Hwang Yoon ^a   Lee, Seok Ha ^a   Jung, Jongwan ^b   Cho, Seong Ho ^a   Lee, Kangbok ^a   Koh, Kwangok ^a   Lee, Duckhyung ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

^b Sejong University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTORS; DIGITAL CAMERAS; DIGITAL IMAGE STORAGE; IMAGE SENSORS; IMAGING TECHNIQUES; OPTICAL DESIGN; SENSORS; SULFATE MINERALS; TUNGSTEN;

CMOS IMAGE SENSOR (CIS); DESIGN RULES; OPTICAL (PET) (OPET); OPTICAL PERFORMANCES; PROCESS ARCHITECTURE; TRANSFER GATE (TG); VLSI TECHNOLOGIES;

PIXELS;

EID: 47249118344     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339728     Document Type: Conference Paper

References (3)

1. S. H. Lee, et al., VLSI Symp. Tech., 2006.
2. J. Kim, et al., IEDM, p123, 2006.
3. M. Cohen, et al., IEDM, p127, 2006.