Large magnetoresistance over an entire region from 5 to 380 K in double helical CoMnSi compound

Journal of Physics D: Applied Physics

Volumn 41, Issue 12, 2008, Pages

  Zhang, Q ^a   Li, W F ^a   Sun, N K ^a   Du, J ^a   Li, Y B ^a   Li, D ^a   Zhang, Y Q ^a   Zhang, Z D ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CRYSTALLOGRAPHY; ELECTRIC RESISTANCE; MAGNETIC FIELDS; MAGNETIC STRUCTURE; MAGNETOELECTRONICS; MAGNETORESISTANCE; SPIN FLUCTUATIONS;

DIFFERENT MECHANISMS; DOUBLE HELICAL; K-SPACE; MAGNETIC (CE); MAGNETO-RESISTANCE (MR) RATIO; MEASURING TEMPERATURE; MULTILAYER (ML); TEMPERATURE REGIONS;

MAGNETIC FIELD EFFECTS;

EID: 47249101056     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/12/125001     Document Type: Article

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