Ab initio investigations on the electronic structure and optical properties of HX-ZnO

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 372, Issue 32, 2008, Pages 5372-5376

  Tang, X ^a   Lu, H F ^b   Ma, C Y ^a   Zhao, J J ^a   Zhang, Q Y ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Electronic structure; First principles; HX ZnO; Optical property

Indexed keywords

COMPRESSIVE STRESS; ELECTRONIC STRUCTURE; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; OPTICAL PROPERTIES; REFLECTION; STRUCTURAL PROPERTIES; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE; ZINC SULFIDE;

AB INITIO INVESTIGATION; ABSORPTION CO-EFFICIENT; DIELECTRIC FUNCTIONS; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; FIRST PRINCIPLES; HEXAGONAL STRUCTURES; INDIRECT SEMICONDUCTOR; ULTRASOFT PSEUDOPOTENTIALS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 46849097839     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.06.031     Document Type: Article

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