On the existence of two different resistive switching mechanisms in metal organic charge transfer complex thin films

7th Annual Non-Volatile Memory Technology Symposium, NVMTS

Volumn , Issue , 2006, Pages 116-119

  Kever, Thorsten ^a   Klopstra, Bart ^a   Böttger, Ulrich ^a   Waser, Rainer ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Amorphous material; Charge transfer complex; Metal organic thin film; Non volatile memory; Resistive switching mechanisms

Indexed keywords

AMORPHOUS MATERIALS; CHARGE TRANSFER; FILM PREPARATION; METALS; NONVOLATILE STORAGE; ORGANOMETALLICS; PHYSICAL VAPOR DEPOSITION; SWITCHING;

BISTABLE SWITCHING; CHARGE TRANSFER COMPLEX; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; METAL ORGANIC THIN FILMS; NON-VOLATILE MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS;

THIN FILMS;

EID: 46849086583     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nvmt.2006.378889     Document Type: Conference Paper

References (12)

1. R. Waser, "Nanoelectronics and Information Technology", Wiley-VCH, Weinheim, 2003.
2. W. R. Hiatt, T. W. Hickmott, "Bistable switching in niobium oxide diodes", Appl. Phys. Lett. 6 (1965) 106.
3. D. P. Oxley, "Electroforming, switching and memory effects in oxide thin films", Science 3 (4) (1977) 217.
4. G. Dearnaley, A. M. Stoneham, D. V. Morgan, "Electrical phenomena in amorphous oxide films", Rep. Prog. Phys. 33(11) (1970) 1129.
5. P. W. M. Blom, R. M. Wolf, J. F. M. Cillessen, M. P. C. M. Krijn, "Ferroelectric Schottky diode", Phys. Rev. Lett. 73 (15) (1994) 2107.
6. P. van-der-Sluis, "Non-volatile memory cells based on ZnxCdl-xS ferroelectric Schottky diodes", Appl. Phys. Lett. 82 (23) (2003) 4089.
7. A. Bandyopadhyay, A. J. Pal, "Large conductance switching and memory effects in organic molecules for data-storage applications", Appl. Phys. Lett. 82 (8) (2003) 1215.
8. J. Ouyang, C. W. Chu, C. R. Szmanda, L Ma, Y. Yang, "Programmable polymer thin film and non-volatile memory device", Nat. Mater. 3(12) (2004) 918.
9. R. S. Potember, T. O. Poehler, D. O. Cowan, "Electrical switching and memory phenomena in Cu-TCNQ thin films", Appl. Phys. Lett. 34 (6) (1979) 405.
10. T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, C. Adachi, "Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition", Appl. Phys. Lett. 83 (6) (2003) 1252.
11. S. Sun, P. Wu, D. Zhu, "The preparation, characterization of amorphous Cu-TCNQ film with a low degree of charge-transfer (DCT) and its electric switching properties", Thin Solid Films 301 (1-2) (1997) 192.
12. T. Kever, C. Nauenheim, U. Böttger, R. Waser, "Preparation and characterisation of amorphous Cu:7,7,8,8- Tetracyanoquinodimethane thin films with low surface roughness via thermal codeposition", Thin Solid Films, in press.