Structures and phase transition of GaAs under pressure

Chinese Physics Letters

Volumn 25, Issue 6, 2008, Pages 2169-2172

  Cui, Hong Ling ^a   Chen, Xiang Rong ^a,b   Ji, Guang Fu ^c   Wei, Dong Qing ^d  

^a SICHUAN UNIVERSITY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

^c RESEARCH CENTER OF LASER FUSION   (China)

^d SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CESIUM COMPOUNDS; CHLORINE COMPOUNDS; DENSITY FUNCTIONAL THEORY; III-V SEMICONDUCTORS; LATTICE THEORY; NICKEL COMPOUNDS; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

DENSITY-FUNCTIONAL-THEORY; FIRST PRINCIPLES; PLANE-WAVE METHOD; PRESSURE DERIVATIVES; ROCK SALT; TRANSITION PRESSURE; ULTRASOFT PSEUDOPOTENTIALS; ZINC BLENDE;

GALLIUM ARSENIDE;

EID: 46749156301     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/6/067     Document Type: Article

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