Angle integrated photoemission study of SmO0.85F 0.15FeAs

Chinese Physics Letters

Volumn 25, Issue 6, 2008, Pages 2225-2227

  Ou, Hong Wei ^a   Zhao, Jia Feng ^a   Zhang, Yan ^a   Shen, Da Wei ^a   Zhou, Bo ^a   Yang, Le Xian ^a   He, Cheng ^a   Chen, Fei ^a   Xu, Min ^a   Wu, Tao ^b   Chen, Xian Hui ^b   Chen, Yan ^a   Feng, Dong Lai ^a  

^a FUDAN UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONIC STRUCTURE; GROUND STATE; PHOTOELECTRON SPECTROSCOPY;

ANTIFERROMAGNETIC GROUND STATE; BAND STRUCTURE CALCULATION; BRILLOUIN ZONES; DENSITIES OF STATE; ELECTRONIC.STRUCTURE; GAP OPENING; NEW SUPERCONDUCTOR; SHARP FEATURES;

SUPERCONDUCTING TRANSITION TEMPERATURE;

EID: 46749140927     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/6/083     Document Type: Article

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