A 0.6 V, 4.32 mW, 68 GHz low phase-noise VCO with intrinsic-tuned technique in 0.13 μm CMOS

IEEE Microwave and Wireless Components Letters

Volumn 18, Issue 7, 2008, Pages 467-469

  Chen, Hsien Ku ^b   Chen, Hsien Jui ^c   Chang, Da Chiang ^d   Juang, Ying Zong ^d   Lu, Shey Shi ^a,b  

^a IEEE

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c FARADAY TECHNOLOGY CORPORATION   (Taiwan)

^d NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

Author keywords

Accumulation mode; Back gate; CMOS; Intrinsic tuned; Millimeter wave (MMW); Phase noise; Quality factor; Small chip size; Varactor; Voltage controlled oscillator (VCO)

Indexed keywords

CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; METALS; MOS DEVICES; SEMICONDUCTOR MATERIALS; STANDARDS; TUNING;

(I ,J) CONDITIONS; ACCUMULATION MODES; CMOS TECHNOLOGIES; FIGURE-OF-MERIT (FOM); FREQUENCY TUNING; METAL-OXIDE SEMICONDUCTOR (MOS); ON CHIPS; PHASE NOISE (PHN); POWER CONSUMPTION (CE); TUNING RANGE (TR); VOLTAGE-CONTROLLED OSCILLATOR (VCO);

VARIABLE FREQUENCY OSCILLATORS;

EID: 46749128191     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2008.925106     Document Type: Article

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