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IEEE Microwave and Wireless Components Letters

Volumn 18, Issue 7, 2008, Pages 491-493

Design of broadband highly linear IQ modulator using a 0.5 μm E/D-PHEMT process for millimeter-wave applications

(1) Chang, Hong Yeh a,b

a IEEE

b NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

Enhancement depletion pseudomorphic high electron mobility transistor (E D PHEMT); Millimeter wave (MMW); Quadrature amplitude modulator (QAM)

Indexed keywords

EIGENVALUES AND EIGENFUNCTIONS; ELECTRON MOBILITY; MODULATION; PROCESS DESIGN; PROCESS ENGINEERING; TELECOMMUNICATION SYSTEMS;

(E ,3E) PROCESS; CHIP SIZES; MILLIMETER WAVE APPLICATIONS; PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR (PHEMT);

CMOS INTEGRATED CIRCUITS;

EID: 46749121849 PISSN: 15311309 EISSN: None Source Type: Journal
DOI: 10.1109/LMWC.2008.924926 Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.