One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications

Journal of Crystal Growth

Volumn 310, Issue 15, 2008, Pages 3413-3415

  Gogneau, N ^a   Le Gratiet, L ^a   Cambril, E ^a   Beaudoin, G ^a   Patriarche, G ^a   Beveratos, A ^a   Hostein, R ^a   Robert Philip, I ^a   Marzin, J Y ^a   Sagnes, I ^a  

^a CNRS   (France)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTICAL WAVEGUIDES; ORGANOMETALLICS; QUANTUM ELECTRONICS; STRUCTURAL PROPERTIES;

(PL) PROPERTIES; DIELECTRIC MASKS; E BEAM LITHOGRAPHY; ELSEVIER (CO); HYDROGEN-SILSESQUIOXANE (HSQ); INAS/INP (001); LOW PRESSURE (LP); METAL ORGANIC (MO); NANO-METER-SCALE; NEW APPROACHES; QD SIZE; QUANTUM DOT (CO); QUANTUM DOTS (QDS); SELECTIVE AREA GROWTH (SAG); SELECTIVE AREA MOVPE GROWTH (SAG) TECHNIQUE; SINGLE PHOTON SOURCES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 46749120541     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.04.019     Document Type: Article

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