Design and analysis of doped left-handed materials

Chinese Physics B

Volumn 17, Issue 5, 2008, Pages 1645-1651

  Zhang, Hong Xin ^a   Bao, Yong Fang ^b   Lü, Ying Hua ^a   Chen, Tian Ming ^a   Wang, Hai Xia ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Doped materials; Forbidden band; LHMs; Pass band

Indexed keywords

CAPACITANCE; DIELECTRIC DEVICES; ELECTRIC EQUIPMENT; ENERGY STORAGE; FINITE DIFFERENCE TIME DOMAIN METHOD; NONLINEAR OPTICS; RESONANCE;

(PL) PROPERTIES; DESIGN AND ANALYSIS; FINITE-DIFFERENCE TIME-DOMAIN (FDTD) SIMULATIONS; LEFT HANDED MATERIALS (LHM); LEFT-HANDED (LH) MATERIALS; PASS BANDS;

CAPACITORS;

EID: 46749108095     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/5/020     Document Type: Article

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