Modulation of surface reactivity via electron confinement in metal quantum well films: O2 adsorption on PbSi (111)

Journal of Chemical Physics

Volumn 129, Issue 1, 2008, Pages

  Zhang, Zhen ^a   Zhang, Yanfeng ^b   Fu, Qiang ^a   Zhang, Hui ^a   Yao, Yunxi ^a   Ma, Teng ^a   Tan, Dali ^a   Xue, Qikun ^b   Bao, Xinhe ^a  

^a DALIAN INSTITUTE OF CHEMICAL PHYSICS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DOS; ELECTRIC CURRENTS; ELECTRON SPECTROSCOPY; ELECTRONS; GAS ADSORPTION; LEAD; LEAD ALLOYS; METALS; MODULATION; MOLECULAR BEAM EPITAXY; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; OXYGEN; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTOIONIZATION; PHOTONS; PLASMA CONFINEMENT; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTAL SURFACES; SPECTRUM ANALYSIS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; ULTRAVIOLET SPECTROSCOPY; X RAY FILMS;

AMERICAN INSTITUTE OF PHYSICS (AIP); ELECTRON CONFINEMENTS; HIGH-DENSITY; METAL FILMS; OXYGEN ADSORPTION; PB FILMS; QUANTUM MODULATION; QUANTUM WELLS; QUANTUM-WELL STATES (QWS); REACTIVITY (CHEMICAL); SI (111); SURFACE REACTIVITY; ULTRAVIOLET (UV); X RAY PHOTOELECTRON SPECTROSCOPY (XPS);

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 46749094624     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2919992     Document Type: Article

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