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Volumn 78, Issue 2, 2008, Pages

Quantum interference and weak localization effects in the interlayer magnetoresistance of layered metals

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EID: 46749085488     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.024506     Document Type: Article
Times cited : (12)

References (46)
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    • As an aside, we note that another interesting feature of the AMRO in these materials is that they are inverted with respect to the expectation for isotropic interlayer hopping. Such a situation can occur when the interlayer hopping t () varies significantly around the Fermi surface in the appropriate way (Ref.). It is interesting to note that the planes of ET molecules in adjacent layers are twisted with respect to each other by 62 degrees (Ref.), which may be responsible for such an intralayer variation of the interlayer hopping integral.
    • As an aside, we note that another interesting feature of the AMRO in these materials is that they are inverted with respect to the expectation for isotropic interlayer hopping. Such a situation can occur when the interlayer hopping t () varies significantly around the Fermi surface in the appropriate way (Ref.). It is interesting to note that the planes of ET molecules in adjacent layers are twisted with respect to each other by 62 degrees (Ref.), which may be responsible for such an intralayer variation of the interlayer hopping integral.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.