Effect of CdSe quantum dots on hole transport in poly(3-hexylthiophene) thin films

Applied Physics Letters

Volumn 92, Issue 26, 2008, Pages

  Kumari, Kusum ^a   Chand, Suresh ^b   Kumar, Pankaj ^b   Sharma, Shailesh N ^b   Vankar, V D ^a   Kumar, Vikram ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CARRIER MOBILITY; ETHYLENE; OPTICAL WAVEGUIDES; OXIDE FILMS; PHOTOACOUSTIC EFFECT; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; SOLIDS; THICK FILMS; THIN FILMS; TIN; TITANIUM COMPOUNDS;

AMERICAN INSTITUTE OF PHYSICS (AIP); CADMIUM SELENIDE (CDSE); CDSE QUANTUM DOTS (QD); CONDUCTION MECHANISMS; CURRENT VOLTAGE (I V) CHARACTERISTICS; DEVICE CONFIGURATIONS; HOLE CURRENTS; HOLE TRANSPORTING; INDIUM TIN OXIDE (ITO); MOBILITY MODELING; PEDOT:PSS; POLY 3 HEXYLTHIOPHENE (P3HT); POLY(3-HEXYLTHIOPHENE-2 ,5-DIYL) (P3HT); QUANTUM DOT (CO); TEMPERATURE RANGES; TRAP DENSITIES; TRAP ENERGY;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 46649110355     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2955524     Document Type: Article

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