Modeling the effect of SiO2 additions and cooling rate on the electrical behavior of donor-acceptor codoped positive temperature coefficient thermistors

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Zubair, M A ^a   Leach, C ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; BARIUM; CALCIUM; COOLING SYSTEMS; CURIE TEMPERATURE; ELECTROMAGNETISM; FREEZING; HEALTH; MAGNETISM; OZONE WATER TREATMENT; PERMITTIVITY; PLATINUM COMPOUNDS; POSITIVE TEMPERATURE COEFFICIENT; SCHOTTKY BARRIER DIODES; SILICON; SILICON COMPOUNDS; SURFACE CHARGE; TEMPERATURE;

(1 1 0) SURFACE; ACCEPTOR ENERGY; AMERICAN INSTITUTE OF PHYSICS (AIP); AVERAGE GRAIN SIZES; BULK RESISTIVITIES; CHARGE UNIT; CONCOMITANT REDUCTION; COOLING RATE (CR); COOLING RATES (CR); DOUBLE SCHOTTKY BARRIER (DSB); PEAK RESISTIVITY; POSITIVE TEMPERATURE COEFFICIENT (PTC); ROOM-TEMPERATURE RESISTIVITY; SURFACE STATE DENSITIES; TEMPERATURE RANGES; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31);

COOLING;

EID: 46449100640     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937245     Document Type: Article

References (23)

1. W. Heywang, J. Am. Ceram. Soc. 47, 484 (1964).
2. G. Goodman, J. Am. Ceram. Soc. 46, 48 (1963).
3. W. Heywang, J. Mater. Sci. 6, 1214 (1971).
4. M. Kuwabara, Solid-State Electron. 27, 929 (1984).
5. W. Heywang and H. Thomann, in Electronic Ceramics, edited by, B. C. H. Steele, (Elsevier, Amsterdam, 1991).
6. B. Huybrechts, K. Ishizaki, and M. Takata, J. Mater. Sci. 30, 2463 (1995).
7. H. Ueoka and M. Yodogana, IEEE Trans. Manuf. Technol. MFT-3, 77 (1974).
8. H. Ueoka, Ferroelectrics 7, 351 (1974).
9. T. Miki and A. Fujimoto, J. Appl. Phys. 83, 1592 (1998).
10. G. H. Jonker, Solid-State Electron. 7, 895 (1964).
11. H. Ihring, J. Am. Ceram. Soc. 64, 617 (1981).
12. H. M. Allak, A. W. Brinkman, G. J. Russell, and J. Woods, J. Appl. Phys. 63, 4530 (1988).
13. J. IIIingsworth, H. M. Al-Allak, A. W. Brinkman, and J. Woods, J. Appl. Phys. 67, 2088 (1990).
14. R. D. Roseman and N. Mukharjee, J. Electroceram. 10, 117 (2003).
15. H.-F. Cheng, J. Appl. Phys. 66, 1382 (1989).
16. H. P. Abicht, H. T. Langhammer, and K. H. Felgner, J. Mater. Sci. 26, 2337 (1991).
17. G. H. Jonker, Mater. Res. Bull. 2, 401 (1967).
18. H. Ihring and W. Puschert, J. Appl. Phys. 48, 3081 (1977).
19. H. Ihring and D. Hennnings, Phys. Rev. B 17, 4593 (1978).
20. T. Kolodiazhnyi, A. Patric, and G. P. Johari, J. Appl. Phys. 89, 3939 (2001).
21. E. Brzozowski and M. S. Castro, J. Eur. Ceram. Soc. 24, 2499 (2004).
22. J. Daniels, R. Wernicke, Philips Res. Rep. 31, 544 (1976).
23. S. A. Long and R. M. Blumenthal, J. Am. Ceram. Soc. 54, 577 (1971).