Fabrication and characterization of a pentacene thin film transistor with a polymer insulator as a gate dielectric

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 710-715

  Lee, Chulwoo ^a   Ko, Jungmin ^a   Lee, Junyoung ^a   Chung, Ilsub ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGRICULTURAL PRODUCTS; CRYSTAL GROWTH; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); GRAIN BOUNDARIES; OPTICAL DESIGN; SEMICONDUCTING ORGANIC COMPOUNDS; SOLIDS; THICK FILMS; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

ACTIVE REGION (AR); BACK GATES; CONCENTRATION (COMPOSITION); CURRENT IMAGING; ELECTRICAL (ELECTRONIC) PROPERTIES; FLOW THROUGH; ON/OFF RATIOS; ORGANIC THIN FILM TRANSISTOR (OTFT); PENTACENE (PEN); PENTACENE THIN FILMS; POLYVINYL CINNAMATE (PVCI); SCANNING PROBE MICROSCOPE (SPM); SUBTHRESHOLD SWING (SS); VARIATIONS OF;

THIN FILM DEVICES;

EID: 46449093905     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2889434     Document Type: Article

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