Fabrication of stationary micro-optical shutter based on semiconductor-to-metallic phase transition of W-doped VO2 active layer driven by an external voltage

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 763-767

  Soltani, M ^a   Chaker, M ^a   Haddad, E ^b   Kruzelecky, R ^b   Margot, J ^c   Laou, P ^d   Paradis, S ^d  

^a INRS EMT   (Canada)

^b MPB COMMUNICATIONS INC   (Canada)

^c UNIVERSITÉ DE MONTRÉAL   (Canada)

^d DEFENCE RESEARCH AND DEVELOPMENT CANADA VALCARTIER   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; CURRENT VOLTAGE (I V) CHARACTERISTICS; EXTERNAL VOLTAGES; HADAMARD; INFRARED (IR); METALLIC PHASE; MICRO SLITS; OPTICAL (PET) (OPET); OPTICAL SWITCHING; ROOM-TEMPERATURE (RT); SHUTTER ARRAYS; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31); TRANSMITTANCE SWITCHING;

ELECTRIC CONDUCTIVITY; INFRARED SPECTROMETERS; OPTICAL DESIGN; OPTICAL SHUTTERS; REFLECTION; SEMICONDUCTOR MATERIALS;

SWITCHING;

EID: 46449086372     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2870227     Document Type: Article

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