Doping dependence of resonant inelastic X-ray scattering in high-T c cuprates

Physica C: Superconductivity and its Applications

Volumn 412-414, Issue SPEC. ISS., 2004, Pages 143-146

  Tsutsui, K ^a   Tohyama, T ^a   Maekawa, S ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Hubbard model; Numerically exact diagonalization technique; Resonant inelastic X ray scattering

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRANSFER; DOPING (ADDITIVES); HAMILTONIANS; HIGH TEMPERATURE SUPERCONDUCTORS; RESONANCE;

HUBBARD MODELS; MOTT GAPS; NUMERICALLY EXACT DIAGONALIZATION TECHNIQUES; RESONANT INELASTIC X-RAY SCATTERING;

OXIDE SUPERCONDUCTORS;

EID: 4644370280     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physc.2003.11.067     Document Type: Conference Paper

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