Changes in the magnetoresistive properties of first AFM Co/Cu multilayers upon annealing

Journal of Applied Physics

Volumn 87, Issue 9 II, 2000, Pages 4858-4860

  Kubinski, D ^a   Parsons, M ^a  

^a Ford Research   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4644365471     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373182     Document Type: Article

References (10)

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6. Auger depth profile measurements on a specimen annealed at 300°C for 2 h demonstrate the 100 Å capping layer is sufficient to prevent oxidation of the underlying Co/Cu ML.
7. M. Parsons and D. Kubinski, Ford Technical Report SRR-1999-28.
8. B. Dieny, P. Humburt, V. S. Speriosu, S. Metin, B. A. Gurney, P. Baumgart, and H. Lefakis, Phys. Rev. B 45, 806 (1992).
9. D. Kubinski and M. Parsons, Ford Technical report SRR-1999-61.
10. max with annealing temperature and time can vary for samples taken from different depositions.