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2
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J. Ohshita, M. Nodono, H. Kai, T. Watanabe, A. Kunai, K. Komaguchi, M. Shiotani, A. Adachi, K. Okita, Y. Harima, K. Yamashita, and M. Ishikawa, Organometallics, 18, 1453 (1999).
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4
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J. Ohshita, M. Nodono, A. Takata, H. Kai, A. Adachi, K. Sakamaki, K. Okita, and A. Kunai, Macromol. Chem. Phys., 201, 851 (2000); J. Ohshita, T. Sumida, A. Kunai, A. Adachi, K. Sakamaki, and K. Okita, Macromolecules, 33, 8890 (2000).
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5
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4644325011
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note
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5: C, 48.92; H, 5.47. Found: C, 49.01; H, 5.49%.
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6
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0034984435
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U. Mitschke and P. Bäuerle, J. Chem. Soc., Perkin Trans. 1, 2001, 740; R. L. Wu, J. S. Schumm, D. L. Person, and J. M. Tour, J. Org. Chem., 61, 6906 (1996).
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J. Chem. Soc., Perkin Trans. 1
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Mitschke, U.1
Bäuerle, P.2
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7
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0001498430
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U. Mitschke and P. Bäuerle, J. Chem. Soc., Perkin Trans. 1, 2001, 740; R. L. Wu, J. S. Schumm, D. L. Person, and J. M. Tour, J. Org. Chem., 61, 6906 (1996).
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J. Org. Chem.
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Wu, R.L.1
Schumm, J.S.2
Person, D.L.3
Tour, J.M.4
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8
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0004133516
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Gaussian, Inc., Pittsburgh, PA
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"Gaussian 98, revision A.9," Gaussian, Inc., Pittsburgh, PA.
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Gaussian 98, Revision A.9
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9
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0342814629
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T. Katoh, Y. Ogawa, Y. Inagaki, and R. Okazaki, Bull. Chem. Soc. Jpn, 70, 1109 (1997).
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Katoh, T.1
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Inagaki, Y.3
Okazaki, R.4
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10
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4644306434
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note
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3 sized crystal. 5776 unique reflections; with I > 3°(I) (reflns/para = 15.44) were used in refinement; R = 5.4, Rw = 8.7%. Selected bond distances (Å) and angles (deg): Si(1)-C(2) = 1.875(6), Si(1)-C(6) = 1.869(9), Si(1)-C(10) = 1.876(6), Si(1)-C(14) = 1.865(6), S(1)-C(1) = 1.717(6), S(1)-C(4) = 1.741(6), C(1)-C(2) = 1.378(8), C(1)-C(5) = 1.462(8), C(2)-C(3) = 1.419(8), C(5)-C(6) = 1.385(8), C(2)-Si(1)-C(6) = 92.2(3), C(2)-Si(1)-C(10) = 119.6(3), C(6)-Si(1)-C(10) = 119.3(3), C(2)-Si(1)-C(14) = 116.8(3), C(6)-Si(1)-C(14) = 119.1(3), C(10)-Si(1)-C(14) = 92.3(3). Four thiophene and two silole rings in the molecule show essentially the same structural parameters, respectively. Crystallographic data for sDTS-1 have been deposited with Cambridge Crystallographic Data Centre as supplementary publication no. CCDC-239560.
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11
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0037435560
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d as shown in a previous paper. See, Y. Kunugi, K. Takimiya, K. Yamane, K. Yamashita, Y. Aso, and T. Otsubo, Chem. Mater., 15, 6 (2003). XRD measurement of the vapor-deposited film showed no signals, indicating that the film is amorphous.
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Chem. Mater.
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Kunugi, Y.1
Takimiya, K.2
Yamane, K.3
Yamashita, K.4
Aso, Y.5
Otsubo, T.6
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12
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0041429601
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For FET properties of oligothiophenes, see M. Melucci, M. Gazzano, G. Barbarella, M. Cavallini, F. Biscarini, P. Maccagnani, and P. Ostoja, J. Am. Chem. Soc., 125, 10266 (2003); S. Ponomarenko and S. Kirchmeyer, J. Mater. Chem., 13, 197 (2003).
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J. Am. Chem. Soc.
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Melucci, M.1
Gazzano, M.2
Barbarella, G.3
Cavallini, M.4
Biscarini, F.5
Maccagnani, P.6
Ostoja, P.7
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13
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0037326146
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For FET properties of oligothiophenes, see M. Melucci, M. Gazzano, G. Barbarella, M. Cavallini, F. Biscarini, P. Maccagnani, and P. Ostoja, J. Am. Chem. Soc., 125, 10266 (2003); S. Ponomarenko and S. Kirchmeyer, J. Mater. Chem., 13, 197 (2003).
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(2003)
J. Mater. Chem.
, vol.13
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Ponomarenko, S.1
Kirchmeyer, S.2
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