Magic layer thickness in Bi ultrathin films on Si(1 1 1) surface

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 80-85

  Saito, Mineo ^a,b   Ohno, Takahisa ^a,b   Miyazaki, Tsuyoshi ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

2D growth; Magic layer thickness

Indexed keywords

RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON; STRESSES; SURFACE STRUCTURE; THIN FILMS; WETTING;

2D GROWTH; ATOMIC RELAXATION; MAGIC LAYER THICKNESS; QUANTUM SIZE EFFECT (QSE);

BISMUTH COMPOUNDS;

EID: 4644350302     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.06.106     Document Type: Conference Paper

References (21)

1. R.M. Tromp, A.W. Denier van der Gon, F.K. LeGoues, M.C. Reuter, Phys. Rev. Lett. 71 (1993) 3299.
2. E.Z. Luo, S. Heun, M. Kennedy, J. Wollschlaeger, M. Henzler, Phys. Rev. B 49 (1994) 4858; V. Yeh, M. Tringides, Phys. Rev. B 61 (2000) R10602.
3. E.Z. Luo, S. Heun, M. Kennedy, J. Wollschlaeger, M. Henzler, Phys. Rev. B 49 (1994) 4858; V. Yeh, M. Tringides, Phys. Rev. B 61 (2000) R10602.
4. J. Tersoff, R. Tromp, Phys. Rev. Lett. 70 (1993) 2782.
5. B.J. Hinch, et al., Europhys. Lett. 10 (1989) 341.
6. L. Gavioli, K.R. Kimberlin, M.C. Tringides, J.F. Wendelken, Z. Zhang, Phys. Rev. Lett. 82 (1999) 129.
7. I. Matsuda, H.W. Yeom, T. Tanikawa, K. Tono, T. Nagao, S. Hasegawa, T. Ohta, Phys. Rev. B 63 (2001) 125325.
8. K. Budde, E. Abram, V. Yeh, M. Tringides, Phys. Rev. B 61 (2000) 10602.
9. H. Hong, et al., Phys. Rev. Lett. 90 (2003) 076104.
10. T.H. Cho, Q. Niu, Z. Zhang, Phys. Rev. Lett. 82 (1999) 129 and references therein.
11. T. Nagao, J.T. Sadowski, M. Saito, S. Yaginuma, T. Kogure, Y. Fujikawa, T. Ohno, S. Hasegawa, T. Sakurai, Phys. Rev. Lett.; T. Nagao, private communication.
12. N. Troullier, J.L. Martins, Phys. Rev. B 43 (1991) 1993.
13. To avoid ghost states of the Bi separable potentials, we choose a special local potential, so that nine separable potentials (s, p, and d types) are necessary for each Bi atom.
14. S. Nakatani, T. Takahashi, Y. Kuwahara, M. Aono, Phys. Rev. B 52 (1995) 8711.
15. T. Takahashi, K. Izumi, T. Ishikawa, S. Kikuta, Surf. Sci. Lett. 183 (1987) 302.
16. T. Takahashi, S. Nakatani, T. Ishikawa, S. Kikuta, Surf. Sci. Lett. 191 (1987) 825.
17. H. Naitoh, N. Shimaya, F. Oishi, S. Shoji, Nishigaki, Appl. Surf. Sci. 123-124 (1988) 171.
18. K.J. Wan, T. Guo, W.K. Ford, J.C. Hermanson, Surf. Sc. 261 (1992) 69.
19. C. Park, R.Z. Bakhtizin, T. Hasizume, T. Sakurai, Jpn. J. Appl. Phys. 32 (1993) 1416.
20. Y.K. Kim, J.S. Kim, C.C. Hwang, S.P. Shrestha, C.Y. Park, Surf. Sc. (2002) 498.
21. M. Saito, A. Oshiyama, Phys. Rev. B 48 (1993) 11804.