Study on deposition kinetics of high-K materials by X-ray fluorescence techniques

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 59, Issue 8, 2004, Pages 1183-1187

  Carpanese, Caterina ^a   Crivelli, Barbara ^a   Caniatti, Massimo ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; CORRELATION METHODS; FLUORESCENCE; HAFNIUM COMPOUNDS; MICROELECTRONICS; REACTION KINETICS; SENSITIVITY ANALYSIS;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); COMPOSITION ANALYSIS; DEPOSITION KINETICS; X-RAY FLUORESCENCE (XRF);

X RAY ANALYSIS;

EID: 4644345021     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2004.05.005     Document Type: Conference Paper

References (5)

1. 2 or Si-O-N) underlayers. J. Appl. Phys. Lett. 92(12):2002;7168-7174.
2. Bellandi E., Crivelli B., Elbaz A., Alessandri M., Boher P., Defranoux C. Optical characterization of high-K materials deposited by ALCVD. ALTECH 2003, Proc. 203rd Spring Meeting of the Electrochem. Soc., Paris. 2003;316-319.
3. 2 and Al/Hf composite materials deposited by ALCVD™ Mater. Res. Soc. Symp. 745:2002;149-154.
4. Klockenkämper R. Total-Reflection X-ray Fluorescence Analysis. 1997;29-38 Wiley & Sons, New York.
5. Burdick R.K., Borror C.M., Montgomery D.C. A review of methods for measurement systems capability analysis. J. Qual. Technol. 35(4):2003;342-354.