메뉴 건너뛰기




Volumn 42, Issue C, 2003, Pages 1-22

Many-electron theory for electronic transition process — Its importance in materials science

Author keywords

CI calculation; many electron theory; relativistic DV ME method; relativistic DV X method; UV absorption; x ray absorption

Indexed keywords


EID: 4644319198     PISSN: 00653276     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0065-3276(03)42038-8     Document Type: Article
Times cited : (6)

References (25)
  • 2
    • 84889809384 scopus 로고    scopus 로고
    • Molecular Simulations Inc., San Diego, CA
    • CASTEP Program on Cerius 4.2, Molecular Simulations Inc., San Diego, CA.
    • CASTEP Program on Cerius 4.2
  • 3
    • 0003417613 scopus 로고    scopus 로고
    • WIEN97, A Full Potential Linearized Augmented Plane Wave Package for Calculating Crystal Properties
    • Technical University of Vienna Austria
    • Blaha, P., Schwarz, K., Luitz, J., WIEN97, A Full Potential Linearized Augmented Plane Wave Package for Calculating Crystal Properties. 1999, Technical University of Vienna, Austria.
    • (1999)
    • Blaha, P.1    Schwarz, K.2    Luitz, J.3
  • 7
    • 48649095951 scopus 로고    scopus 로고
    • School of Engineering, Kyoto University
    • Iwata, T., Master thesis, 2001, School of Engineering, Kyoto University.
    • (2001) Master thesis
    • Iwata, T.1
  • 22
    • 84876280975 scopus 로고    scopus 로고
    • School of Engineering, Kyoto University
    • Fujimura, K., Master thesis, 2002, School of Engineering, Kyoto University.
    • (2002) Master thesis
    • Fujimura, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.