Photoluminescence studies in highly Te-doped Ga 1-x In x As y Sb 1-y epitaxial layers grown on GaSb by liquid phase epitaxy

Applied Surface Science

Volumn 238, Issue 1-4 SPEC. ISS., 2004, Pages 400-404

  Diaz Reyes, J ^a   Herrera Perez, J L ^a   Gomez Herrera, M L ^a   Cardona Bedoya, J A ^b   Mendoza Alvarez, J G ^b  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

Acton monochromator; Photoluminescence spectroscopy; Semiconductor

Indexed keywords

BAND STRUCTURE; CRYOSTATS; FURNACES; INFRARED SPECTROSCOPY; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; REMOTE SENSING; STOICHIOMETRY;

ACTON MONOCHROMATORS; BAND-GAP ENERGIES; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 4644250394     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.241     Document Type: Conference Paper

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