Characterization of high-k gate dielectric and metal gate electrode semiconductor samples with a total reflection X-ray fluorescence spectrometer

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 59, Issue 8, 2004, Pages 1227-1234

  Sparks, Chris M ^a   Beebe, Meredith R ^a   Bennett, Joe ^a   Foran, Brendan ^a   Gondran, Carolyn ^a   Hou, Alex ^b  

^a Proc Characterization Anal Lab   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Hafnium; High k; Metal gate; Ruthenium; Total reflection X ray fluorescence; TXRF

Indexed keywords

ELECTRODES; FLUORESCENCE; SAMPLING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH-K; METAL GATE; SEMICONDUCTOR INDUSTRY; TOTAL REFLECTION X-RAY FLUORESCENCE (TXRF);

X RAY SPECTROMETERS;

EID: 4644243676     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2004.04.009     Document Type: Conference Paper

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