Dissociative adsorption of nitric oxide on Si(111)-(7 × 7) surface

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 1, 2008, Pages 1672-1676

  Hashinokuchi, Michihiro ^a   Ito, Hironori ^a   Teraoka, Yuden ^b   Moritani, Kousuke ^c   Okada, Michio ^a   Kasai, Toshio ^a  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c UNIVERSITY OF HYOGO   (Japan)

Author keywords

NO; Oxinitiride; Semiconductor; Si(111) (7 7); Thermal

Indexed keywords

ADSORPTION; ATOMIC PHYSICS; ATOMS; DISSOCIATION; NITRIC OXIDE; OXIDES; PHOTOELECTRON SPECTROSCOPY; RATE CONSTANTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

ADDITIONAL REACTIONS; DISSOCIATIVE ADSORPTIONS; NO; OXINITIRIDE; SEMICONDUCTOR; SI(111); SURFACE TEMPERATURES; TEMPERATURE DEPENDENCES; THERMAL; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 46349090853     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1672     Document Type: Article

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